characteristic symbol MR750 mr751 mr752 mr754 mr756 mr758 mr760 unit 6.0a axial leaded silicon rectifier r-6 1of2 features a a b c d maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified mechanical data MR750-mr760 dim min max a 25.4 ? b 8.60 9.10 c 1.20 1.30 d 8.60 9.10 all dimensions in mm high current capability diffused junction low forward voltage drop high reliability high surge current capability case: r-6, molded plastic terminals: plated leads solderable per mil-std-202, method 208 polarity: cathode band weight: 2.1 grams (approx.) mounting position: any marking: type number lead free: for rohs / lead free version, add ?-lf? suffix to part number, see page 4 single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms reverse voltage v r(rms) 35 70 140 280 420 560 700 v average rectified output current (note 1) @t a = 60c i o 6.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 400 a forward voltage @i f = 6.0a v fm 1.0 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 5.0 1.0 a ma typical junction capacitance (note 2) c j 150 pf typical thermal resistance junction to ambient (note 1) r ja 20 c/w operating temperature range t j -50 to +150 c storage temperature range t stg -50 to +150 c note: 1. leads maintained at ambient temperature at a distance of 9.5mm from the case 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c.
2of2 1 2 3 4 5 i , ave r a g e r e c t i f ie d c ur r e n t ( a ) o t , a m bient tem perature (o c) fi g . 1 forw ard current deratin g cur v e a 6 7 8 25 0 50 75 100 125 150 175 200 0 0.1 1.0 100 0.6 1.0 1.4 1.8 i , i n st a n t a n e ous f or wa r d c u r r e n t ( a ) f v , instantaneous forward voltage (v) fi g . 2, typical forward characteristics f 10 0.2 0 pulse width = 300 s 2% duty cycle m t = 25oc j 10 100 1000 1 10 100 c, c a p a c i t a n c e ( p f ) j v , reverse volta ge (v) fig. 4 typical junction capacitance r t = 25c f = 1mhz j 0 100 200 300 400 500 1 10 100 i , p e a k f o r w a r d sur g e c u r r e n t (a ) fs m number of cycles at 60hz fi g . 3 maximum non-repetitive peak forward sur g e current 8.3ms single half sine-wave jedec method
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